First Demonstration of Deep Sub-Micron Germanium-on-Insulator PMOSFET with Adapted Threshold Voltage

Germanium MOSFET is considered as a promising alternative to silicon due to its intrinsically higher carrier mobility, especially for holes. Using appropriate channel and pocket implants, this paper presents for the first time well-behaved short channel devices characteristics featuring a negative V
_th
and no parasitic conduction at the BOx interface. After a brief presentation of the device fabrication, sub-threshold characteristics are discussed. The linear drain off-current can be reduced by a factor of 200 with channel+pocket implants. The effect of the drain voltage Vj is reflected in a strong band to band tunneling (BTBT) in the off-state leakage that can be reduced by junction optimization.