A 1.2-V Single-Stage, SiGe BiCMOS Low-Noise Amplifier at 5.8GHz for Wireless Applications

This paper describes a low voltage low noise amplifier (LNA), designed using 0.35μm SiGe BiCMOS process, targeting a center frequency of 5.8GHz with a voltage supply 1.2V. A power gain of 12.1dB at 5.8GHz has been achieved with a low power consumption of 3.8mW, including all biasing circuitry. The overall noise figure of the LNA is 3dB with both input and output impedance matched to 50Ω.