A 45nm 4Gb 3-Dimensional Double-Stacked Multi-Level NAND Flash Memory with Shared Bitline Structure

Recently, 3-dimensional (3D) memories have regained attention as a potential future memory solution featuring low cost, high density and high performance. We present a 3D double stacked 4Gb MLC NAND flash memory device with shared bitline structure, with a cell size of 0.0021mum
²
/bit per unit feature area. The device is designed to support 3D stacking and fabricated by S3 and 45nm floating-gate CMOS technologies.