A 50nm 8Gb NAND Flash Memory with 100MB/s Program Throughput and 200MB/s DDR Interface

A 3.3V 8Gb NAND flash memory with a synchronous double-data-rate (DDR) interface is designed and fabricated using 3M 50nm technology to meet the requirements of the markets. This paper achieves a NAND flash program throughput of 100 MB/s with quad-plane operation, which is 5x previously reported. I/O read/write throughput of 200MB/s is achieved using a newly developed DDR interface and data path. The chip features a dual interface, supporting both the newly developed synchronous DDR interface as well as the standard, asynchronous NAND flash interface.