High Frequency Devices based on Graphene

Graphene is a native one-atom-thick crystal consisting of a single sheet of carbon atoms. In this material, discovered in 2005, the electron transport is ballistic at room temperature and is described by a relativistic-like quantum Dirac equation instead of a Schrodinger equation. Also, graphene has a Young modulus of 1.5 TPa. Due to these unique properties, graphene is very promising for high frequency nanoelectronic devices, such as oscillators and switches. In this paper, we show that a single graphene barrier is a switch with a very high on-off ratio, which has a large differential negative resistance beyond 1 THz. Also, we show that graphene is a very efficient RF-NEMS switch for microwave applications.