Power FET Controlled Dimmer for Incandescent Lamps

V-shaped metal-oxide-semiconductor (VMOS) dimmers in direct and inverse phase control schemes are analyzed and compared with conventional thyristorized ones. The absence of turn-off circuits and bulky radio frequency interference (RFI) filtering circuitry are the main advantages of the method. A 1-kW prototype with closed-loop overcurrent protection in an inverse-phase-control version is presented.