A 1.75 GHz CMOS Class E RF Power Amplifier and oscillator

In this work, the design of a CMOS Class E Power Amplifier is presented, integrated in 0.13-μm CMOS technology, the amplifier achieves a power added efficiency of 44.8% at output power of 21.2 dBm. Based on this design, two applications are introduced: First, polar modulation through the supply voltage is considered, and then high efficiency power generation through class E oscillators is discussed.