Properties of Composite Films Obtained by Ion-Plasma Atomizing

In this work thin films of titanium silicide and molybdenum as materials for contacts on different substrates and for Schottky barriers in gallium arsenide have been investigated. Material of constant should be of low specific resistance and high thermostability at all following technological operations. Suitability of silicide films for devices with Schottky barrier has been evaluated by values of inverse voltage and coefficient of identity. Composition of the obtained films has been studied by the method of Reserford back scattering (RBS) and by the method of Auger spectroscopy.