Hot Carrier Injection in Submicron MOSFETs Fabricated by Rapid Isothermal Annealing

One of the most important problems in submicron MOSFETs is the hot carrier injection into the gate oxide. This characteristics depend on the gate oxidation conditions (1,2) or the post oxidation annealing. (3) But there is no report on the reliability aspects of the devices fabricated by the rapid isothermal annealing.