Characterization of LPCVD Aluminun for VLSI Processing

Aluminum and aluminum alloys are widely used for metallizing devices in VLSI processing. Such films can be deposited by a variety of techniques which all presently suffer from inadequate step coverage. In this paper, we discuss the properties of Al films deposited by a low pressure chemical vapor deposition (LPCVD) process using tri-isobutyl Al (TIBAL) as a source. Such films are now commercially available. ┼ Results of this work will establish a basic understanding of the properties of these LPCVD Al films and their suitability for current VLSI processing.