An Aluminum Gate One Megabit DRAM

A 5 V one megabit dynamic random access memory (DRAM) has been fabricated in an NMOS metal gate technology. The device, organized as 256K words by 4 bits, features a 4 X 4 bit serial access mode to provide a total of 16 bits for each access cycle, and is designed for 150 ns performance with an effective 50 ns data rate. All good chips have been fabricated using an extension of the IBM silicon and aluminum metal oxide semiconductor (SAMOS) process in the Essex Junction manufacturing line presently producing 64K and 72K DRAMs.