The Comprehensive Model of Oxidation-Enhanced Diffusion

Thermal oxidation is known to enhance the B and P diffusions and many reports have been published on the oxidation-enhanced diffusion (OED). Hu(l) proposed the OED model which was related to the super-saturation of Si interstitials. Based on Hu'a model, Taniguchi et al.(2) studied OED on its relation to the oxidation rate and the total amount of impurities. They found that the excess part of diffusivity enhanced by oxidation (AD) decreases as the total amount of impurity increases. Fair(3) proposed that ΔD is inversely proportional to the surface vacancy concentration. Recently, Mei et al.(4) reported that P diffusion from a poly-Si dopant, sources is enhanced by oxidation.