An as-P(N+-N-) Double Diffused Drain MOSEFT for VLSIs

Various kinds of constraints imposed on device design must be overcome in order to realize sophisticated VLSIs with submicron dimensions. Among these constraints, short-channel effects and hot-carrier effects, which seem to have a design tradeoff relation with each other, are most important. In particular, hot-carrier effects are fatal, because part of the carriers trapped in the oxide cause long-term device degradation.