Evaluation of Transmission Line Model Structures for Silicide-to-Silicon Specific Contact Resistance Extraction

In order to measure silicide-to-silicon specific contact resistance rho
_c
, transmission line model (TLM) structures were proposed as attractive candidates for embedding in CMOS processes. We optimized TLM structures for nickel silicide and platinum silicide and evaluated them for various doping levels of n- and p-type Si. The measurement limitations and accuracy of the specific contact resistance extraction from the optimized TLM structures are discussed in this paper.