Comparative studies on As-grown and nanotextured GaN:Mg epilayer

Nanotextured high-density Mg-doped GaN were obtained using photoelectrochemical etching. The blue luminescence bands (2.7 - 2.9 eV) of the as-grown and nanotextured samples show a U-shaped intensity variation with temperature in the range of 10 - 150 K. The variation in intensity of observed three peaks are analysed in the light of variation of their peak position and widths as a function of temperature. The origins of these features are discussed in this paper.