Subthreshold analog performance of channel engineered SOI CMOS devices and circuits for ultra-low power analog/mixed-signal applications

Subthreshold analog operation of CMOS devices are very attractive in terms of both very low power dissipation and high voltage gain. In this paper, a systematic investigation, with the help of extensive process and device simulations, of the effects of halo doping [both double-halo (DH) and single-halo (SH) or lateral asymmetric channel (LAC)] on the subthreshold analog performance of 100 nm SOI CMOS devices and circuits is reported. CMOS amplifiers made with the halo implanted devices are found to have higher voltage gain over their conventional counterpart.