Smart Universal Multiple-Valued Logic Gates by Transferring Single Electrons

This paper proposes smart universal multiple-valued (MV) logic gates by transferring single electrons (SE
s
). The logic gates are based on mosfet based SE turnstiles that can accurately transfer SE
s
with high speed at high temperature. The number of electrons transferred per cycle by the SE turnstile is a quantized function of its gate voltage, and this characteristic is fully exploited to compactly finish MV logic operations. First, we build arbitrary MV literal gates by using pairs of SE turnstiles. Then, we propose universal MV logic-to-value conversion gates and MV analog-digital conversion circuits. We propose a SPICE model to describe the behavior of the mosfet based SE turnstile. We simulate the performances of the proposed gates. The MV logic gates have small number of transistors and low power dissipations.