Study of Transport Properties in 1D Nanostructured Semiconductor Devices using Monte Carlo Simulation

Electron transport through devices (ternary Al
_x
Ga
_1-x
As, Ga
_x
In
_1-x
As and Al
_x
In
_1-x
As), have been observed using Monte Carlo simulation. The properties that have been observed and compared are number of electrons in the Γ valley, L valley, and the X valley, drift velocity in the presence of different scattering mechanisms.