Silicon-Germanium p-i-n Photodetectors at Telecommunication Wavelengths Grown Directly on Silicon

We report on Si-rich Si
_1-x
Ge
_x
p-i-n waveguide detectors with responsivities greater than 0.74 A/W at 1.3μm and 20K. We present two photodetector designs for 1.3μm detection on silicon without virtual buffer relaxation layers.