A Novel Polysilicon Thin-Film Transistor with Multi-Trenched Body for Suppressing Off-State Leakage

In this paper, the polysilicon thin-film transistor with multi-trenched body is fabricated and investigated that manifests off-state leakage suppression without degrading on-state current and other electric performances. The reason is that the leakage path can be separated by the multi-trenched body and the carrier scattering through the polysilicon grain-boundary traps can also be minimized. Furthermore, this proposed multi-trenched thin-film transistor can be easily fabricated by trenching and backfilling the buried oxide without destroying the channel film quality. And it is evaluated to reduce more than 50% off-state leakage current compared with the conventional thin-film transistor.