Design of NDR-Based Multiple-Valued Multiplexer Using Standard SiGe Process

The design of a eight-valued multiplexer using the negative differential resistance (NDR) circuit is demonstrated. The NDR circuit is made of one Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and two SiGe-based heterojunction bipolar transistors (HBT). During suitably arranging the MOS parameters, we can obtain the NDR characteristic in its combined current-voltage curve. First we design an eight-valued decoder using this MOS-HBT-NDR circuit, after that we demonstrate its application to an eight-valued multiplexer. The design and simulation of this NDR-based multiplexer is based on the standard 0.35 μm SiGe BiCMOS process.