InGaP/InGaAs MOS-PHEMT with A Liquid Phase Oxidized InGaP Gate Insulator

An InGaP/InGaAs/GaAs metal-oxide- semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with a thin InGaP native oxide layer as the gate insulator has been demonstrated. The MOS-PHEMTs exhibit higher maximum drain current density, larger gate-swing voltage, larger gate-to-drain breakdown voltage, and better noise performance in comparison with the conventional PHEMTs. This proves that the proposed MOS-PHEMT is promising for device applications.