Aluminium Incorporation in Lanthanum Oxide Films by using Plasma Immersion Ion Implantation

The physics and the effects of aluminium incorporation into lanthanum oxide (La
₂
O
₃
) films were studied by using x-ray photoelectron spectroscopy and electrical measurements. We found that trace amount (5% ) of aluminium incorporation in lanthanum oxide film can suppress the leakage current effectively. The bulk oxide traps and interface traps can also reduced. The percentage of aluminium incorporation into the La
₂
O
₃
films by plasma immersion ion-implantation needs to be optimized to have the maximum reduction of oxide traps and to maintain the lowest leakage current.