A $\hbox{TiSi}_{2}/\hbox{Si}$ Heteronanocrystal Memory Operated With Hot Carrier Injections

The programming and erasing of a $\hbox{TiSi}_{2}/\hbox{Si}$ heteronanocrystal memory were carried out by channel hot electron injection and drain side hot hole injection, respectively. Compared to an Si nanocrystal memory, a $\hbox{TiSi}_{2}/\hbox{Si}$ heteronanocrystal memory exhibits much better writing/erasing efficiency and higher writing/erasing saturation level. The retention transient process indicates that the $\hbox{TiSi}_{2}/\hbox{Si}$ heteronanocrystal memory has a very slow charge loss mechanism. The result of the localization of charge shows that a reverse read leads to a higher threshold voltage shift, which is almost not dependent on the amplitude of the read voltages.