Development of compact EUV source based on laser compton scattering

High-power extreme ultra-violet (EUV) sources are required for next generation semiconductor lithography. We start developing a compact EUV source in the spectral range of 13-14 nm, which is based on laser Compton scattering between a 7 MeV electron beam and a high intensity CO
₂
laser pulse. Before the main laser Compton scattering for EUV radiation, the electron beam is pre- bunched by a high power seeding laser pulse with the Compton wavelength at a harmonic of the seeding laser [1]. In this paper, we describe the preliminary consideration for the EUV source development and a plan of experiment generating micro-bunched electron beam.