Highly Strained 1.22-$\mu$ m InGaAs Lasers Grown by MOVPE

In this work, the highly strained In
_0.39
Ga
_0.61
As-GaAs lasers grown by metal-organic vapor phase epitaxy were studied. The InGaAs lasers could emit at 1.22 mum under continuous-wave conditions, whereas the threshold current density (J
_th
) and transparency current density (J
_tr
) were 140 and 37.2 A/cm
²
, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers longer than 1.2 mum. The characteristic temperature (T
_o
) was 146.2 K indicating the good temperature stability. These excellent laser characteristics could be attributed to the optimized growth conditions.