Removing S-parameters on-wafer measurements parasitic elements using time domain gating: Application to transmission lines

This paper presents experimental results of removing on-wafer microwave measurements parasitic elements due to RF probes pads and interconnects using Time Domain Gating method up to 110GHz. This approach has been tested on transmission lines processed using metallization layers of NXP RF BiCMOS technology and compared with the classical OPEN/SHORT de-embedding method. The limitations and the ways to improve this technique are shown.