High performance LNA in 0.35 um SiGe RF transceiver one chip for cellular applications

This paper describes the design and test results of a high performance low noise amplifier (LNA) for code division multiple access (CDMA) one chip transceiver integrated circuit (IC). The circuits are implemented in a standard 0.35-um Samsung Si/Ge BiCMOS process. The LNA has 4 step forward gain control of 15.8 dB, 4 dB, −7.5 dB, and −21 dB. The measured performance of the proposed LNA at the maximum gain stage shows the noise figure of 1.15 dB and the input 3
^rd
order intercept point (IIP3) of 11 dBm, respectively.