Interference from power/signal lines and to SRAM circuits in 65nm CMOS inductive-coupling link

This paper discusses interference of an inductive-coupling link in 65nm CMOS. Electromagnetic interference from power/signal lines and to SRAM was simulated and measured. Interference from power lines for mobile applications (line and space) is smaller than that for high- performance applications (mesh type). Interference from signal lines requires only 9% of additional transmit power even in the worst case of logic circuits. In typical operation range, interference to SRAM is ignorable. Only when supply voltage is much lower than typical range, the bit-line noise from the inductive-coupling link influences SRAM operation. Interference to SRAM is small compared with other influences such as device variations and soft errors.