On-The-Fly Interface Trap Measurement and Its Impact on the Understanding of NBTI Mechanism for p-MOSFETs with SiON Gate Dielectric

For the first time, we developed an on-the-fly method OFIT to measure the interface trap density N
_IT
without recovery during measurement. The OFIT produces the most reliable experimental data of the interface trap generation dynamics under stress and therefore provides a solid ground to check various modeling work. The slope n of t
ⁿ
time evolution of DeltaN
_IT
under stress is temperature dependent, supporting dispersive Hydrogen transport in the oxide. Comparing OFIT data with the data measured by ultra-fast pulsed V
_th
measurement, we successfully decompose the NBTI DeltaV
_TH
into interface trap component DeltaV
_TH

^IT
and oxide charge component DeltaV
_TH

^OX
quantitatively for the p-MOSFETs with SiON gate dielectric.