Gate-First Processed FUSI/HfO2/HfSiOx/Si MOSFETs with EOT=0.5 nm - Interfacial Layer Formation by Cycle-by-Cycle Deposition and Annealing

We have successfully fabricated a 0.5 nm FUSI-NiSi/ HfO
₂
HfSiO
_x
/ Si gate stack structure with the gate-first process. The HfSiO
_x
interfacial layer was formed by the cycle-by-cycle deposition and annealing process, followed by the in-situ layer-by-layer deposition and annealing for HfO
₂
growth. The gate leakage current of ~ 10 A/cm at V
_fb
- 1.0 V and the effective electron mobilityof 120 cm
²
/Vs at 0.8 MV/cm were obtained for n-MOSFET with EOT = 0.49 nm.