Reliability of Enhancement-mode AlGaN/GaN HEMTs Fabricated by Fluorine Plasma Treatment

The reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by the fluorine plasma treatment technique was investigated by applying OFF-state and ON- state long-term high-electric-field stress. A moderate negative shift (-0.25 V) was observed in the threshold voltage after 288 hours of stress. This shift, however, can be eliminated with an enhancement/depletion dual-gate configuration which effectively prevents high electric field from influencing the fluorine plasma treated area.