Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention

We have fabricated a phase change memory using doped In-Ge-Te to improve the data retention required for industrial and automotive use. This chalcogenide features higher thermal stability as well as denser texture and improved adhesion. The memory cell using doped In-Ge-Te provided a larger read margin and better data retention than conventional Ge
₂
Sb
₂
Tes, and we demonstrated 10-year retention at temperatures above 150degC, which is the highest temperature ever reported.