SiC-Powerdiodes: Design and performance

In this work we discuss static measurements on bipolar 6.5 kV-SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut 4deg off the (0001) basal plane in order to prove design rules developed for Si-devices. To suppress emitter recombination currents, the p-emitter thickness has to be increased. The switching behaviour of optimized 6.5 kV-diodes with a 3 mum thick p-emitter at different current levels at DC link voltages of 4 kV and at junction temperatures up to 125degC is shown. For these diodes first results on forward stability are also presented.