Microwave switching functions using reversible metal-insulator transition (MIT) in VO2 thin films

We present the practical realization of microwave switches (both in series or shunt configurations) based on reversible metal-semiconductor transitions exhibited by vanadium dioxide (VO
₂
) material. This transition (thermally or electrically initiated) is used to switch on and off a microwave signal propagating in a microwave coplanar waveguide incorporating a thin VO
₂
film. The realised devices may be employed in applications were high speed/ high power qualifications are required (fast reconfigurable antennas, tuneable components etc.).