Modelling of Dual-Gate MOSFET 1/f Noise in Linear Region

This paper presents experimental and numerical results for the dual-gate MOSFET (DGMOSFET) normalized 1/f noise parameter B/I
_D

²
in linear working region. In modelling, gate-to-gate interelectrode space influence is taken into account with the fitting parameter m, which is defined as the ratio of inner transistors channel lengths. Model and methodology for the normalized 1/f noise parameter calculation for the DGMOSFET linear region have been proposed. The model is based on the ac current approach in the DGMOSFET low-frequency small-signal noise equivalent circuit and carrier-number fluctuations and correlated mobility fluctuations. It has been shown that discrepancy between measured data and numerical results obtained only by the DeltaN model can be explained by use of the gradual channel approximation MOSFET model and the unified 1/f noise model.