Properties of MOD-derived SrBi2Ta2O9 thin films crystallized in an electric field

SrBi
₂
Ta
₂
O
₉
(SBT) films with thickness of about 200 nm were prepared on Pt/Ta/SiO
₂
/Si substrates by metal-organic decomposition (MOD) method. A high electric field (250 kV/cm) was applied to SBT film during 750degC furnace annealing in atmosphere for 40 min. This applied electric field does some impacts on the microstructures and electrical properties of SBT regardless of the states of electric field. Under an electric field, the films exhibited stronger a/b-axis preferential orientation in Bismuth-layered structure (BLS) phase and a little higher ratio of second phase. In addition, parts of the granular grains grew into rod-like grains. As a result, the electrical properties of SBT thin films were improved by the application of electric field.