Formation of InGaN self-assembled quantum dots on GaN by metal-organic chemical vapor deposition with NH3 periodic interruption growth

Self-assembled InGaN QDs on GaN epi-layer were grown by metal-organic chemical vapor deposition. In the growth of InGaN QDs, NH
₃
was supplied in cyclic interrupted mode with interval of 3 seconds and 5 seconds. This work enables the fabrication of dense, uniform InGaN QDs, and is potentially applied to optical materials systems.