Reliability Evaluation of 0.1 μm AlSb/InAs HEMT Low Noise Amplifiers for Ultralow-Power Applications

Three-temperature lifetesting was performed to evaluate the reliability performance of 0.1 μm AlSb/InAs HEMT low noise amplifiers (LNAs) for ultralow-power applications. For the first time, the reliability performance of 0.1 μm AISb/lnAs HEMT LNAs was demonstrated. The results show a median time to failure of approximately 2x10
⁶
hours at T
_junction
of 85°C with activation energy of 1.5 eV. High-reliability performance is essential for successful insertion of 0.1 μm AISb/lnAs HEMT LNAs for military and space applications with ultralow-power requirements.