Reliability Demonstration of a Ferroelectric Random Access Memory Embedded within a 130nm CMOS Process

Reliable operation of a 4 Mb ferroelectric random access memory (FRAM) embedded within a standard 130 nm CMOS process is demonstrated. Intrinsic endurance test to 5.4×10
¹²
cycles shows no degradation of switched polarization. 10 year, 85degC, data retention life is demonstrated with 125°C data bake to 1,000 Hrs with no fails.