Electronic transport in indium oxide nanowire field effect transistors

High-quality single-crystal indium oxide (ln
₂
O
₃
) nanowires (NWs) are synthesized using gold catalytic vapor-liquid-solid growth. The synthesized ln
₂
O
₃
NWs are non-stoichiometric due to oxygen vacancies from X-ray photoelectron spectroscopic study. The ln
₂
O
₃
NW field effect transistors show the n-type behavior due to these oxygen vacancies.