Random network transistors of carbon nanotubes directly grown on glass substrate

We report a transistor of randomly networked single-walled carbon nanotubes (SWNTs) grown on glass by using water plasma CVD. The density of the nanotube on pre-patterned region was more than 50/μm
²
which is much larger than the percolation threshold. The nanotube network transistors were fabricated with Al
2
O
3
for the gate oxide and a conducting and transparent ZnO for the back-gate. These nanotube active devices may be fitted to thin film transistor applications for future opto-electronics.