Electrical transport properties of VO2 nanowire field effect transistors

The VO
2
nanowires were grown on Si
3
N
4
/Si substrate by a vapor transport method. Single crystalline rectangular structure of VO
2
nanowires is verified by scanning electron microscopy and transmission electron microscopy. Individual VO
2
nanowires were fabricated into field effect transistors (FETs). Electrical transport properties are extracted from these nanowire FETs.