Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors

Top-gate(TG) field effect transistors (FETs) with channels composed of Si nanowires were successfully fabricated in this study using photolithographic processes. In the TG FETs fabricated on oxidized Si substrates, the channels composed of Si nanowires with diameters of about 100 nm with natural SiO
₂
. The surfaces of the Si nanowires with natural SiO
₂
were covered with the gate metal to form TG FETs.