Piezoelectric Properties of PZT Film Prepared by Chemical Solution Deposition Method

The influence of the stress and orientation of a lead zirconate titanate (PZT) film on its piezoelectric properties was investigated. Preferentially (111) oriented PZT films were prepared on various substrates with different thermal expansion coefficient, such as stainless steel, alumina, magnesia, and silicon by the CSD method. Preferentially (100) oriented PZT films were also prepared on stainless steel. The displacements of cantilevers of the PZT films with the substrates were measured by the laser Doppler vibration method, and the d
₃₁
piezoelectric coefficient was calculated from the displacement. Compressive stress degraded the d
₃₁
piezoelectric coefficient of (111) oriented PZT film. In the PZT film with compressive stress, the change of orientation to the (100) direction effectively improved the d
₃₁
coefficient. An excellent piezoelectric coefficient (d
₃₁
= 55 pm/V) of PZT film was obtained on the stainless steel substrate.