Error-resistant Single Qubit Gates with Trapped Ions

This study presents single qubit gates with trapped ions that are robust against experimental imperfections over a wide range of parameters. In particular it is shown that errors caused by an inaccurate setting of either frequency, amplitude, or duration of the driving field, or of a combination of these errors are tolerable when a suitable sequence of radiation pulses, or a shaped pulse is applied instead of, for instance, a single rectangular pi-pulse. Thus an essential prerequisite for scalable quantum computation with trapped ions is demonstrated.