New passive all-optical semiconductor device for bit-1 level noise reduction

This paper proposes and demonstrates a new configuration of SA-based microcavity that can achieve the required bit-1 level stabilisation. It is based on a simple variation of the well-known reflection-mode SA microcavity used for extinction ratio enhancement, with cavity parameters designed for obtaining a decreasing curve of reflectance vs input power, while an increasing curve is obtained with the usual design. Therefore it can be used with similar multiple quantum well (QW) structures, whose carrier lifetime can be reduced by introducing capture and recombination centers via low temperature epitaxy, high-energy ion implantation, Be or Fe doping, etc.