Polysilicon transistors fabricated on silicon implanted amorphous silicon

1500-AA-thick low-pressure chemical vapor deposition (LPCVD) polysilicon films deposited in the amorphous state at 560 degrees C have been self-implanted with silicon at doses between 1*10/sup 15//cm/sup 2/ and 5*10/sup 15//cm/sup 2/. n- and p-channel MOS transistors fabricated in these films using a 650 degrees C process exhibit a peak in the field-effect mobilities at an implant dose of 2*10/sup 15//cm/sup 2/. The mobilities improved from nonimplant values of 28(n) and 15(p) to peak values of 64(n) and 45(p) cm/sup 2//V-s.<
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