Analytical model for I-V characteristics of ion-implanted MESFET's with heavily doped channel

A theoretical model for the I-V characteristics of ion-implanted metal-semiconductor field-effect transistors (MESFETs) has been developed. A formula for effective drift saturation velocity for electrons and a Gaussian approximation for the inverse of reduced distances in the channel have erased the process of formulation. Theoretical formulas for early saturation of drain current and transconductance obtained in the framework of the Lehovec-Zuleeg procedure are quite simple and accurate. When calculated results from the present model are compared with available experimental results, an encouraging correspondence between the two is observed. A study of the appropriateness of the velocity overshoot and the softening of pinch-off voltage indicates that both of these phenomena are real in short-channel MESFETs and need to be carefully accounted for in a realistic model. The model is equally applicable also to ion-implanted JFETs.<
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