4H-SiC RF BJTs with Long Pulse L-band Operation

In this paper, we present L-band 4H-SiC RF BJTs on a conductive substrate capable of delivering an output power of 28.2 W and a power gain of 7.5 dB at 1.4 GHz under long pulse and duty cycle. The power density is 11.8 W/mm, which is comparable to the UHF devices while almost 6 times of reported L-band devices.